Toward Low‐Power Cryogenic Metal‐Oxide Semiconductor Field‐Effect Transistors

In the present article, we discuss cryogenic field-effect transistors. particular, saturation of subthreshold swing due to band-tailing is studied. It shown with simulations and experiments that engineering oxide-channel interfaces a strong increase gate oxide capacitance are effective in improving switching behavior device. The implication scaling on power consumption devices investigated, too.Furthermore, an alternative for conventional doping transistors discussed. Based synchrotron XAS-TFY UPS measurements it experimentally, true nanoscale devices, simple SiO2 coating yields shift conduction band equivalent very high dopant concentration. As result, steep slope strongly improved electrical characteristics become feasible. This article protected by copyright. All rights reserved.